Issue |
Eur. Phys. J. Appl. Phys.
Volume 64, Number 1, October 2013
International Workshop on Advanced Materials and Nanotechnology 2012 (IWAMN 2012)
|
|
---|---|---|
Article Number | 10402 | |
Number of page(s) | 5 | |
Section | Nanomaterials and Nanotechnologies | |
DOI | https://doi.org/10.1051/epjap/2013130011 | |
Published online | 04 October 2013 |
https://doi.org/10.1051/epjap/2013130011
Synthesis of indium phosphide nanocrystals by sonochemical method and survey of optical properties*
1
Center for Materials Science, Faculty of Physics, VNU University of Science, 334 Nguyen Trai, Thanh Xuan, Hanoi, Vietnam
2
Faculty of Physics, Ho Chi Minh City University of Science, 227 Nguyen Van Cu, HCM City, Vietnam
a e-mail: hmtphysics@gmail.com
Received:
3
January
2013
Accepted:
8
March
2013
Published online:
4
October
2013
Indium phosphide semiconductor materials (InP) have various applications in the field of semiconductor optoelectronics because of its advantages. But the making of this material is difficult due to the very weak chemical activity of In element. In this report we present a simple method to synthesize InP nanocrystals from inorganic precursors such as indium chloride (InCl3), yellow phosphorus (P4), reduction agent NaBH4 at low temperature with the aid of ultrasound. Structural, morphological and optical properties of the formed InP nanocrystals were examined by transmission electron microscopy (TEM), X-ray diffraction (XRD), energy dispersed X-ray analysis (EDS), Raman scattering, absorption and photoluminscence (PL) spectroscopy. After the surface treatment of InP nanocrystals with liquid hydrofluoric (HF) acid, the luminescence spectra have an enhanced intensity and consist of the peaks in the region from 500 nm to 700 nm. The intensity of these peaks strongly depends on the concentration and etching time of HF.
© EDP Sciences, 2013
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