Eur. Phys. J. Appl. Phys.
Volume 66, Number 2, May 2014
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||05 June 2014|
ZnO/PS/p-Si heterojunction properties
Department of Applied Science, University of Technology, 9183
a e-mail: email@example.com
Revised: 5 March 2014
Accepted: 2 May 2014
Published online: 5 June 2014
In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.
© EDP Sciences, 2014
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