Eur. Phys. J. Appl. Phys.
Volume 60, Number 3, December 2012
|Number of page(s)||5|
|Section||Semiconductors and Devices|
|Published online||26 November 2012|
A study of BGaN back-barriers for AlGaN/GaN HEMTs
Unité Mixte Internationnale UMI 2958 Georgia Tech-CNRS, F-57070 Metz, France
2 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
a e-mail: firstname.lastname@example.org
Accepted: 28 September 2012
Published online: 26 November 2012
We study the use of a BGaN back-barrier layer in the GaN buffer of AlyGa1−yN/GaN highelectron mobility transistors to improve confinement of carriers in the 2D electron gas region. Unlike InGaN back-barrier designs, whose polarization-induced sheet charges form an electrostatic barrier at the backbarrier/ buffer interface, BGaN back-barrier designs create an electrostatic barrier at the channel/backbarrier interface. This can result in carrier confinement to sub-15 nm thickness, even when the channel is 30 nm wide. Although polarization sheet charges due to the BGaN back-barrier form a secondary well at the back-barrier/buffer interface, increasing the thickness of the back-barrier may move the secondary well so that it no longer interacts with the primary channel.
© EDP Sciences, 2012
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