| Issue |
Eur. Phys. J. Appl. Phys.
Volume 47, Number 3, September 2009
|
|
|---|---|---|
| Article Number | 30303 | |
| Number of page(s) | 10 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap/2009111 | |
| Published online | 12 June 2009 | |
https://doi.org/10.1051/epjap/2009111
Etch pits on (hk0) and (hh
) silicon surfaces. Experimental shapes and simulations
FEMTO-ST Institute, Frequency and Time Department, 26 chemin de l'épitaphe, 25030 Besançon Cedex, France
Corresponding author: ctellier@ens2m.fr
Received:
6
February
2009
Accepted:
20
April
2009
Published online:
12
June
2009
The present work is concerned with the development of etch pits on (hk0) and (hh
) silicon surfaces immersed in various etchants. Final shapes of small etch pits are found to be bounded by {111} facets solely. The orientation dependence of etching shapes is explained in terms of a kinematic and tensorial model involved in the simulator TENSOSIM. An agreement between experimental and theoretical etching shapes is observed showing that the simulator can generate quite accurate 3D etching shapes for pits blocked by limiting facets. After a fair adjustment of the database the simulator derives also etching shapes close to experimental shapes of large
pits.
PACS: 07.05.Tp – Computer interfaces / 81.05.Cy – Elemental semiconductors / 81.65.Cf – Surface cleaning, etching, patterning
© EDP Sciences, 2009
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