Eur. Phys. J. Appl. Phys.
Volume 45, Number 1, January 2009
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||14 January 2009|
Observation of Meyer-Neldel rule in amorphous films of Ge1–xSe2Pbx
Physics Department, Faculty of Education, Ain Shams University, Cairo,
2 Physics Department, Faculty of Science, Suez Canal University, Port-Said, Egypt
3 Department of Physics & Mathematical Engineering, Faculty of Engineering, Suez Canal University, Port-Said, Egypt
Corresponding author: firstname.lastname@example.org
Accepted: 6 October 2008
Published online: 14 January 2009
Electrical conductivity was performed on amorphous thin films of Ge1–xSe2Pbx (with x = 0, 0.2, 0.4, 0.6 and 0.8) as a function of temperature in the range 300–450 K. The experimental results indicate that the conduction is through thermally activated process having two conduction mechanisms. In the first region at high-temperatures range, the values of suggest that the dominant conduction of charge carriers changes from the extended states to the localized states in the band tails at composition x = 0.8. The experimental results have also been analyzed using Meyer-Neldel Rule. The other one appears in the low temperatures region and the conductivity has been analyzed using Mott's variable range hopping conduction. Mott's parameters were calculated for Ge1–xSe2Pbx films.
PACS: 73.61.Jc – Amorphous semiconductors; glasses
© EDP Sciences, 2008
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