| Issue |
Eur. Phys. J. Appl. Phys.
Volume 44, Number 2, November 2008
|
|
|---|---|---|
| Page(s) | 117 - 123 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2008165 | |
| Published online | 21 October 2008 | |
https://doi.org/10.1051/epjap:2008165
Phase transformation in Pb:GeSbTe chalcogenide films
1
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
2
Department of Physics, University of Botswana, Botswana
Corresponding author: rthangaraj@rediffmail.com
Received:
6
May
2008
Accepted:
21
August
2008
Published online:
21
October
2008
A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.
PACS: 68.55.-a – Thin film structure and morphology / 78.20.-e – Optical properties of bulk materials and thin films / 78.66.Jg – Amorphous semiconductors; glasses
© EDP Sciences, 2008
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