Eur. Phys. J. Appl. Phys.
Volume 44, Number 2, November 2008
|Page(s)||117 - 123|
|Section||Semiconductors and Devices|
|Published online||21 October 2008|
Phase transformation in Pb:GeSbTe chalcogenide films
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev Univeristy, Amritsar-143005, India
2 Department of Physics, University of Botswana, Botswana
Corresponding author: firstname.lastname@example.org
Accepted: 21 August 2008
Published online: 21 October 2008
A comprehensive analysis on the amorphous to crystalline phase transformation in Pb:GeSbTe chalcogenide alloy has been discussed. The structure identified with X-ray measurements has been discussed in relation to thermal analysis carried out on bulk samples. Optical constants have been calculated in the 350 to 800 nm wavelength range, using Fresnel's equation. The effect of Pb substitution on the optical contrast in terms of change in reflectivity and optical parameters (viz. refractive index, extinction coefficient) has been discussed. Marginal decrease in the optical contrast has been observed with a small increase in Pb content, which is effective to maintain the sufficient signal to noise ratio for optical phase-change storage.
PACS: 68.55.-a – Thin film structure and morphology / 78.20.-e – Optical properties of bulk materials and thin films / 78.66.Jg – Amorphous semiconductors; glasses
© EDP Sciences, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.