Eur. Phys. J. Appl. Phys.
Volume 47, Number 3, September 2009
|Number of page(s)||5|
|Section||Surfaces, Interfaces and Films|
|Published online||10 June 2009|
Thermal annealing dependence of some physical properties of Bi-substituted Sn–Sb–Se glassy thin films
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005 Punjab, India
2 Department of Physics, University of Botswana, Botswana
Corresponding author: email@example.com
Accepted: 23 March 2009
Published online: 10 June 2009
Bulk glasses of the Sn10SbBixSe70 (0 x ≤ 8) system were prepared by the conventional melt quenching technique. Thin films were prepared by the thermal evaporation technique on glass substrates. Appearance of some crystalline phases is observed from the X-ray diffractograms after heat treatment below the glass transition temperature for 1 h. Scanning electron microscopy studies also show the presence of microcrystalline phases in the amorphous matrix after annealing for 1 h. The effect of Bi concentration and heat treatment on the optical gap and activation energy for dark conductivity were also investigated for the pristine as well as annealed films. The results are discussed on the basis of models related to the presence of defect states in chalcogenide materials.
PACS: 61.05.C- – X-ray diffraction and scattering / 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 74.25.Gz – Optical properties / 78.66.Jg – Amorphous semiconductors; glasses
© EDP Sciences, 2009
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