Eur. Phys. J. Appl. Phys.
Volume 44, Number 2, November 2008
|Page(s)||109 - 115|
|Section||Semiconductors and Devices|
|Published online||21 August 2008|
An approach to Raman spectroscopy and luminescence studies on binary and ternary II–VI semiconductors grown on mordenite matrices
Departamento de Física de la Materia Condensada, E.T.S. Ingenieros Industriales, 47011 Valladolid, Spain
2 Departamento de Física Aplicada, Facultad de Ciencias, C-XII, Universidad Autónoma, Cantoblanco, 28049 Madrid, Spain
3 Facultad de Ciencias, Universidad Pedagógica, C. Libertad, Marianao, La Habana, Cuba
Corresponding author: email@example.com
Revised: 16 May 2008
Accepted: 8 July 2008
Published online: 21 August 2008
Growth of the ternary semiconductor ZnxCdS in MOR type zeolite matrices is reported. Hydrothermal synthesis was used for growing such semiconductor compound and analogues by using Cd and Zn salts as well as Thiourea as precursor sources of Cd, Zn and S elements, respectively. Following synthesis routes previously reported, bulk CdS with a band gap of 2.26 eV was obtained to be used as a reference. The final products were mainly characterized by Raman and Photoluminescence spectroscopies. The study shows the formation of Zn diluted ZnCdS ternary alloy in the final products of the synthesis, particularly for those samples with a Zn(wt%)/Cd(wt%) ratio higher than 0.05, and also the formation of a ZnO phase with a band gap value around 3.3 eV for the sample with the highest Zn content.
PACS: 78.30.Fs – III-V and II-VI semiconductors / 78.55.Et – II-VI semiconductors / 81.05.Dz – II-VI semiconductors
© EDP Sciences, 2008
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