| Issue |
Eur. Phys. J. Appl. Phys.
Volume 41, Number 3, March 2008
|
|
|---|---|---|
| Page(s) | 205 - 213 | |
| Section | Microelectronics and Optoelectronics | |
| DOI | https://doi.org/10.1051/epjap:2008019 | |
| Published online | 12 March 2008 | |
https://doi.org/10.1051/epjap:2008019
A new p+-i-n+ photodiode SPICE model for CMOS pixel applications
LPICM École Polytechnique, 91128 Palaiseau Cedex, France
Corresponding author: razvan.negru@polytechnique.edu
Received:
7
December
2007
Revised:
18
December
2007
Accepted:
21
December
2007
Published online:
12
March
2008
In this paper we discuss and model the effects of the density of defects in hydrogenated amorphous silicon from an electronics point of view. To this end, we have created a SPICE model that accounts for the two main field effects, Poole-Frenkel and tunnel, responsible for the leakage current. The comparison between our model and the experimental data shows that our approach allows a quick evaluation of the quality of the device with no need to run a complete steady state measurement. Also, we have validated our SPICE photodiode model by implementing it into a three CMOS simple pixel structure.
PACS: 85.60.Dw – Photodiodes; phototransistors; photoresistors / 85.60.-q – Optoelectronic devices
© EDP Sciences, 2008
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