Eur. Phys. J. Appl. Phys.
Volume 77, Number 3, March 2017
|Number of page(s)||4|
|Section||Semiconductors and Devices|
|Published online||12 April 2017|
Interface effect and stress effect on Ge2Sb2Te5/Sb superlattice-like thin films
School of Mathematics and Physics, Jiangsu University of Technology, Changzhou 213001, China
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Revised: 21 January 2017
Accepted: 6 March 2017
Published online: 12 April 2017
Ge2Sb2Te5 superlattice-like thin films show great potential for phase-change memory applications. Improvement of the thermal properties of Ge2Sb2Te5 is believed to be related to the Ge2Sb2Te5/Sb interface. The stress effect and interface effect on Ge2Sb2Te5 manifest in structural changes that are observed via X-ray diffraction and Raman spectroscopy experiments. The structure changes from corner-sharing GeTe4-nGen (n = 0) in single-layered Ge2Sb2Te5 to GeTe4-nGen (n = 1, 2, 3) tetrahedra in the superlattice-like thin films that are observed. As a result, Ge2Sb2Te5 prefers the hexagonal structure rather than the face-centred cubic structure during heating.
© EDP Sciences, 2017
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