Regular Article

Modeling of hall mobility for In₂O₃ thin film by metal organic chemical vapor deposition

¹ Institute of Science Technology, University of Sanya, Sanya 572000, PR China
² State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, PR China
³ School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, PR China

^* qianglei123@gmail.com

Received: 29 August 2019
Accepted: 12 November 2019
Published online: 17 December 2019

Abstract

In the light of variable temperature (4.2–300 K) Hall-effect measurements a physics-based model for Hall mobility of indium oxide (In₂O₃), thin film processed by metal organic chemical vapor deposition (MOCVD) has been established. It illustrates the relation among Hall mobility, scattering mechanisms and carrier concentrations exhaustively. Dependence of the potential barrier between grain boundaries on the carrier concentration has been factored in. Concomitantly, account have been taken of exponential tails and the degeneracy in In₂O₃ film. The proposed model reassured by a comparison of the experimental and theoretical calculated data is feasible and reliable. Results demonstrate that under low carrier densities, the prevailing scattering mechanism would be grain boundary scattering, nevertheless, upon exceeding the concentration of 10¹⁹cm⁻³, Hall mobility is chiefly confined to scattering by ionized impurities.