Issue |
Eur. Phys. J. Appl. Phys.
Volume 38, Number 3, June 2007
|
|
---|---|---|
Page(s) | 211 - 216 | |
Section | Semiconductors and Related Materials | |
DOI | https://doi.org/10.1051/epjap:2007097 | |
Published online | 13 June 2007 |
https://doi.org/10.1051/epjap:2007097
Crystallization and glass transition kinetics in Se80Te20-XCdX glasses by using non-isothermal measurement
1
Department of Physics, University of Lucknow, Lucknow, U.P. 226007, India
2
Department of Physics, St. Andrew's College, Gorakhpur, U.P. 273001, India
3
Department of Physics, Jamia Millia Islamia, New Delhi 110025, India
Corresponding author: mush_reslab@rediffmail.com
Received:
22
January
2007
Accepted:
12
April
2007
Published online:
13
June
2007
Crystallization processes of Se80Te20-xCdx (x = 0, 4, 8, 10 and 12) alloys at different heating rates have been studied by differential scanning calorimeter (DSC) by using non-isothermal technique. The values of glass transition temperature (Tg) and crystallization temperature (Tc) are found to be composition and heating rate dependence. From the heating rate dependence of glass transition temperature and crystallization temperature, the activation energy of crystallization (ΔEc), the activation energy for structural relaxation (ΔEt) and the order parameter (n) have been calculated. It was observed that Se80Te16 Cd4 has a minimum value of activation energy of structural relaxation (ΔEt), which indicates that this particular glass has a larger probability to jump to a state of lower configurational energy and higher stability in the glassy region.
PACS: 71.55.Jv – Disordered structures; amorphous and glassy solids / 65.90.+i – Other topics in thermal properties of condensed matter / 67.80.Gb – Thermal properties / 73.61.Jc – Amorphous semiconductors; glasses
© EDP Sciences, 2007
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