Eur. Phys. J. Appl. Phys.
Volume 52, Number 2, November 2010
|Number of page(s)||7|
|Section||Semiconductors and Devices|
|Published online||08 October 2010|
Study of crystallization rate constant of (Se80Te20)100-xAgx chalcogenide glasses
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev
University, Amritsar, 143005 Punjab, India
Corresponding author: firstname.lastname@example.org
Revised: 28 April 2010
Accepted: 4 August 2010
Published online: 8 October 2010
The present paper reports the preparation of (Se80Te20)100-xAgx (0 ≤ x ≤ 4) chalcogenide glasses in bulk by using melt quenching technique. DSC runs of these samples have been taken at four different heating rates (5, 10, 15, 20 K/min). The variation in crystallization temperature Tc with Ag concentration at different heating rates has been studied. A strong co-relation between the pre-exponential factor K0 of rate constant K of crystallization and activation energy of crystallization Ec has been observed. The variation of rate constant K with composition and the dependence of Ec with Ag concentration have been studied.
© EDP Sciences, 2010
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