Eur. Phys. J. Appl. Phys.
Volume 38, Number 1, April 2007
|Page(s)||1 - 5|
|Section||Semiconductors and Related Materials|
|Published online||14 March 2007|
Phase separation phenomena in Sn-Sb-Se glassy semiconductors
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, 143 005 Amritsar, India
Corresponding author: firstname.lastname@example.org
Revised: 20 January 2007
Accepted: 13 February 2007
Published online: 14 March 2007
Differential scanning calorimetric (DSC) and X-ray diffraction (XRD) measurements on Sn-Sb-Se glassy semiconductors have been performed. Phase separation has been revealed with the broadening of the exothermic peak for 11 at% of Sn. The X-ray diffraction studies of annealed samples show that the investigated system could be treated as a solid solution of Sb2Se3 and SnSe2 phases. The deconvolution procedure was used to investigate the crystallization mechanism for the broad exothermic peaks in the thermal scans. From the heating rate dependence of the crystallization temperature, the crystallization parameters have been determined using Kissinger equation and Matusita equation. The investigated parameters indicate higher thermal stability and glass forming ability of Sn10Sb20Se70 chalcogenide glass.
PACS: 61.43.Fs – Glasses / 64.70.Pf – Glass transitions / 81.05.Gc – Amorphous semiconductors
© EDP Sciences, 2007
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