Eur. Phys. J. Appl. Phys.
Volume 37, Number 1, January 2007
|Page(s)||39 - 47|
|Section||Surfaces, Interfaces and Films|
|Published online||13 December 2006|
Microstructure and morphology evolution in chemically deposited semiconductor films: 4. From isolated nanoparticles to monocrystalline PbS thin films on GaAs(100) substrates
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Corresponding author: firstname.lastname@example.org
Revised: 9 October 2006
Accepted: 12 October 2006
Published online: 13 December 2006
Thin lead sulfide films were grown on single crystal GaAs(100) substrates by chemical deposition using Pb(NO3)2 and CS(NH2)2 with excess of NaOH in aqueous solution at a range of deposition temperatures 0–50 °C. The microstructure and morphology evolution were studied as a function of the deposition conditions, resulting in a wide range of microstructures. Ultrahigh resolution scanning electron microscopy and atomic force microscopy indicated a systematic change in particle shape and surface morphology as a function of deposition temperature and deposition time. X-ray diffraction of 200–500 nm thick films indicated a dominant texture throughout the deposition temperature range. At deposition temperatures above 40 °C, single crystal films were obtained. Cross-sectional transmission electron microscopy analyses showed a unique (011)PbS||(100)GaAs and PbS||GaAs orientation relationship.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases / 81.07.Bc – Nanocrystalline materials
© EDP Sciences, 2006
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