Eur. Phys. J. Appl. Phys.
Volume 24, Number 1, October 2003
|Page(s)||13 - 20|
|Section||Surfaces, Interfaces and Films|
|Published online||03 September 2003|
Microstructure and morphology evolution in chemical solution deposited PbSe films on GaAs(100)
Department of Materials Engineering, Ben-Gurion University of the Negev
Beer-Sheva 84105, Israel
Corresponding author: firstname.lastname@example.org
Revised: 30 May 2003
Accepted: 17 June 2003
Published online: 3 September 2003
We have studied the microstructure and morphology evolution in PbSe films chemically deposited on GaAs(100) substrates. The films consisted of a single phase of nanocrystalline rocksalt PbSe. The deposition temperature was found to be an important parameter which strongly influences the film morphology. A gradual transition to strong (111) texture was obtained with increasing deposition temperature, accompanied by a significant increase in crystallite size. Transmission electron microscopy (TEM) cross-sections showed two distinct regions. A layer of small, rounded crystals near the GaAs/PbSe interface above which a second region composed of columnar, 111 oriented crystallites was observed. High resolution TEM and Fourier analysis showed that the first layer of crystallites are in epitaxial registry with the GaAs substrate, in spite of the large (8%) lattice mismatch and the presence of a thin, amorphous interfacial layer.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 81.07.Bc – Nanocrystalline materials / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
© EDP Sciences, 2003
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