Microstructure and morphology evolution in chemical solution deposited semiconductor films: 3. PbSe on GaAs vs. Si substrate

Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel

Corresponding author: ygolan@bgu.ac.il

Received: 12 December 2004
Revised: 28 February 2005
Accepted: 4 March 2005
Published online: 21 June 2005

Abstract

The microstructure and morphology evolution in nanocrystalline PbSe films chemically deposited on GaAs(100) and GaAs(111) substrates were compared to PbSe films on Si(100) under the same conditions. On GaAs substrates, dense and continuous PbSe films were obtained. We show that the temperature dependent morphological changes on GaAs substrates occurred as a result of increased sample thickness due to higher reaction rates. Notably, the deposition of PbSe on Si(100) did not lead to continuous films and no preferred orientation was observed. The improved wetting between PbSe and GaAs appears to be a key factor responsible for the differences observed on the two substrates.