Eur. Phys. J. Appl. Phys.
Volume 31, Number 1, July 2005
|Page(s)||27 - 30|
|Section||Surfaces, Interfaces and Films|
|Published online||21 June 2005|
Microstructure and morphology evolution in chemical solution deposited semiconductor films: 3. PbSe on GaAs vs. Si substrate
Department of Materials Engineering and the Ilse Katz Center for Nanoscience and Nanotechnology, Ben-Gurion University of the Negev, Beer-Sheva 84105, Israel
Corresponding author: firstname.lastname@example.org
Revised: 28 February 2005
Accepted: 4 March 2005
Published online: 21 June 2005
The microstructure and morphology evolution in nanocrystalline PbSe films chemically deposited on GaAs(100) and GaAs(111) substrates were compared to PbSe films on Si(100) under the same conditions. On GaAs substrates, dense and continuous PbSe films were obtained. We show that the temperature dependent morphological changes on GaAs substrates occurred as a result of increased sample thickness due to higher reaction rates. Notably, the deposition of PbSe on Si(100) did not lead to continuous films and no preferred orientation was observed. The improved wetting between PbSe and GaAs appears to be a key factor responsible for the differences observed on the two substrates.
PACS: 68.55.Jk – Structure and morphology; thickness; crystalline orientation and texture / 81.07.Bc – Nanocrystalline materials / 81.15.Lm – Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
© EDP Sciences, 2005
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