Eur. Phys. J. Appl. Phys.
Volume 36, Number 1, October 2006
|Page(s)||11 - 15|
|Section||Characterization of Materials: Imaging, Microscopy and Spectroscopy|
|Published online||05 September 2006|
Growth and optimization by post-annealing of chalcopyrite CuAlS2 compound
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs (LPMS),
École Nationale d'Ingénieurs de Tunis (ENIT), BP 37, le Belvédère, 1002 Tunis, Tunisia
2 Institut de Physique et Chimie des Matériaux Strasbourg (IPCMS), 23 rue du Loess, BP 43 CP, 67034 Strasbourg, France
Corresponding author: firstname.lastname@example.org
Revised: 18 May 2006
Accepted: 15 June 2006
Published online: 5 September 2006
The chalcopyrite CuAlS2 compound was grown from stoichiometric melt by horizontal Bridgman method. The obtained ingots were crushed finely and annealed at different temperatures from 800 °C to 1100 °C under a gas mixture of 5% N2/H2 atmosphere. X-ray diffraction and Raman spectroscopy were used to investigate the layer microstructures, as well as their lattice vibration spectra. The layers were characterized by scanning electron microscopy (SEM) and the compositional analyses were done by energy dispersive X-ray microanalysis (EDX). Raman measurements of the as made powder indicated seven prominent peaks at 205, 250, 290, 340, 369, 418 and 457 cm−1 with large intensity at 457 cm−1. The peaks at 205, 250, 340 and 457 cm−1 were ascribed to B2 modes while the peaks 369 and 418 cm−1 were ascribed to E modes. The peak at 290 cm−1 may be assigned to the A1 mode. After annealing, the Raman features become better and phonon mode at 290 cm−1 looks more distinct. The stoichiometric CuAlS2 compound was obtained when the sample was annealed at 900 °C.
PACS: 81.05.Hd – Other semiconductors / 61.10.Nz – X-ray diffraction / 78.30.Hv – Other nonmetallic inorganics / 68.37.Hk – Scanning electron microscopy (SEM) (including EBIC)
© EDP Sciences, 2006
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