Eur. Phys. J. Appl. Phys.
Volume 30, Number 3, June 2005
|Page(s)||153 - 158|
|Section||Semiconductors and Devices|
|Published online||14 April 2005|
Effect of annealing on properties of CuInS2 thin films
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs (LPMS), École Nationale d'Ingénieurs de Tunis, BP 37, le Belvédère, 1002 Tunis, Tunisia
2 Institut de Physique et Chimie des Matériaux, Strasbourg, France
Corresponding author: Brini_rawdha@yahoo.fr
Revised: 22 December 2004
Accepted: 20 January 2005
Published online: 14 April 2005
Surface morphology, structural and optical properties of CuInS2 thin films grown by the single source thermal evaporation in vacuum have been studied. The films were annealed from 250 to 550 °C in argon atmosphere with low oxygen concentration (O2 < 2 ppm). CuInS2 films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) and optical transmittance and reflectance spectra. The maximum grain size of the sample after annealing at 550 °C was over 150 nm. The electron dispersion spectroscopy and X-ray analysis concludes that the polycrystalline CuInS2 thin film after annealing above 200 °C were sulphur-poor. We obtain CuInS2 layers with high structural and optical quality at annealing temperature above 450 °C with formation of In2O3 as minority phase. The band gap energy of the CuInS2 films after annealing above 450 °C was about 1.50 eV which perfectly matches the solar spectrum for energy conversion.
PACS: 68.55.-a – Thin film structure and morphology / 78.20.Ci – Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity) / 81.15.Ef – Vacuum deposition
© EDP Sciences, 2005
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