| Issue |
Eur. Phys. J. Appl. Phys.
Volume 54, Number 1, April 2011
|
|
|---|---|---|
| Article Number | 10304 | |
| Number of page(s) | 5 | |
| Section | Thin Films | |
| DOI | https://doi.org/10.1051/epjap/2011100498 | |
| Published online | 13 April 2011 | |
https://doi.org/10.1051/epjap/2011100498
Growth of single-phase Cu(In, Al)S2 thin films by thermal evaporation
Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, ENIT,
BP 37, Le Belvédère 1002, , ENIT,
BP 37, Le Belvédère 1002, Tunis, Tunisia
Corresponding author: smaili.fethi@gmail.com
Received:
9
December
2010
Accepted:
8
February
2011
Published online:
13
April
2011
CuIn1-xAlxS2 (CIAS) thin films with different compositions were deposited by the evaporation of the powder of CuIn1-xAlxS2 on to glass substrates heated at 200 °C. The different thin films were obtained with increasing the content aluminium in the powder. Structural, morphological and optical properties of the films were studied in function of the Al content. Polycrystalline CIAS thin films orientated preferentially along the (112) plane were obtained. Then the crystallites have a similar shape as that of all as-deposited films. The incorporation of aluminium atoms moves the main absorption on the left with varied band gap between 1.5 eV and 1.90 eV.
© EDP Sciences, 2011
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