| Issue |
Eur. Phys. J. Appl. Phys.
Volume 35, Number 3, September 2006
|
|
|---|---|---|
| Page(s) | 155 - 158 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2006091 | |
| Published online | 23 August 2006 | |
https://doi.org/10.1051/epjap:2006091
Effect of SHI irradiation on Se-Te-Sn thin films
Department of Physics, Jamia Millia Islamia, New Delhi-110025, India
Corresponding author: mzulfe@rediffmail.com
Received:
13
February
2006
Revised:
17
May
2006
Accepted:
24
May
2006
Published online:
23
August
2006
We have study the effect of Tin impurity and Swift heavy ion irradiation on the optical properties of the chalcogenide thin films. Thin films are prepared by thermal evaporation technique and irradiated by swift heavy ion beam of 60 MeV Si5+ ion with influence of 5 × 1012 ions/cm2. The SHI induced structural and optical changes in the thin films due to which optical band gap decrease. Reduction of the optical band gap is may be due to increase the defect states near to the band tails in the band gap on irradiation.
PACS: 71.23.Cq – Amorphous semiconductors, metallic glasses, glasses / 71.55.Jv – Disordered structures; amorphous and glassy solids / 72.80.Ng – Disordered solids / 78.66.Jg – Amorphous semiconductors; glasses
© EDP Sciences, 2006
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