Eur. Phys. J. Appl. Phys.
Volume 35, Number 3, September 2006
|Page(s)||159 - 163|
|Section||Semiconductors and Related Materials|
|Published online||23 August 2006|
Effect of carrier transfer on the PL intensity in self-assembled In (Ga) As/GaAs quantum rings
Unité de Recherche des Physiques des Semiconducteurs et Capteurs,
Institut Préparatoire aux Études Scientifiques et Techniques, La Marsa
2070, Tunis, Tunisia
2 Instituto de Ciencia de los Materials, Universidad de Valencia, PO Box 22085, 46071 Valencia, Spain
3 Instituto de Microelectrónica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
Corresponding author: firstname.lastname@example.org
Accepted: 9 June 2006
Published online: 23 August 2006
We present results concerning the carrier transfer between In(Ga)As quantum rings in a stacked multilayer structure, which is characterised by a bimodal size distribution. This transfer of carriers explains the observed temperature behaviour of diode lasers based on that kind of stacked layer structures. The inter-ring carrier transfer can be possible by phonon assisted tunnelling from the ground state of the small-ring family towards the big-ring family of the bimodal size distribution. This process is thermally activated in the range 40–80 K.
PACS: 78.55.Cr – Cr-III-V semiconductors / 78.67.Pt – Multilayers; superlattices / 78.47.+p – Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
© EDP Sciences, 2006
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