Eur. Phys. J. Appl. Phys.
Volume 31, Number 1, July 2005
|Page(s)||23 - 25|
|Section||Surfaces, Interfaces and Films|
|Published online||14 April 2005|
Electronic conduction in 40 MeV28Si5+ ion irradiated Se-Te-Pb thin films
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak
Dev University, Amritsar, 143005, India
2 Nuclear Science Center, PO Box 10502, New Delhi 110067, India
Corresponding author: email@example.com
Revised: 21 January 2005
Accepted: 18 February 2005
Published online: 14 April 2005
Amorphous thin films of SeTe20Pbx (0 < x < 2) have been prepared by thermal evaporation. The effect of 40 MeV 28Si5+ ion irradiation on the electronic conduction of SeTe20Pbx (0 < x < 2) thin films has been investigated. The DC electrical conductivity of the films increases by two to three order of magnitude with increase in irradiation fluence from 1012 to 5×1013 ions/cm2. The DC activation energy of conduction also increases with increase in irradiation fluence. Results have been explained on the basis of structural disorders and defects formed due to heavy ion irradiation.
PACS: 61.43.Dq – Amorphous semiconductors, metals, and alloys / 61.82.Fk – Semiconductors / 81.05.Gc – Amorphous semiconductors / 73.61.Jc – Amorphous semiconductors; glasses
© EDP Sciences, 2005
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