Electronic conduction in 40 MeV²⁸Si⁵⁺ ion irradiated Se-Te-Pb thin films

¹ Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar, 143005, India
² Nuclear Science Center, PO Box 10502, New Delhi 110067, India

Corresponding author: rthangaraj@rediffmail.com

Received: 29 September 2004
Revised: 21 January 2005
Accepted: 18 February 2005
Published online: 14 April 2005

Abstract

Amorphous thin films of SeTe₂₀Pb_x (0 < x < 2) have been prepared by thermal evaporation. The effect of 40 MeV ²⁸Si⁵⁺ ion irradiation on the electronic conduction of SeTe₂₀Pb_x (0 < x < 2) thin films has been investigated. The DC electrical conductivity of the films increases by two to three order of magnitude with increase in irradiation fluence from 10¹² to 5×10¹³ ions/cm². The DC activation energy of conduction also increases with increase in irradiation fluence. Results have been explained on the basis of structural disorders and defects formed due to heavy ion irradiation.