Issue |
Eur. Phys. J. Appl. Phys.
Volume 34, Number 1, April 2006
|
|
---|---|---|
Page(s) | 7 - 12 | |
Section | Semiconductors and Related Materials | |
DOI | https://doi.org/10.1051/epjap:2006039 | |
Published online | 04 May 2006 |
https://doi.org/10.1051/epjap:2006039
Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique
Physics Department, Faculty of Science, South Valley University, 82524 Sohag, Egypt
Corresponding author: hus49@hotmail.com
Received:
29
November
2005
Revised:
21
February
2006
Accepted:
24
February
2006
Published online:
4
May
2006
Thin films of Zn CdxO with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5
at.% were deposited by electron-beam evaporation technique. It has
been found that, for as-deposited films, both the transmittance and
electrical resistivity decreased with increasing the Cd content. To improve
the optical and electrical properties of these films, the effect of
annealing temperature and time were taken into consideration for Zn
CdxO film with x = 0.2. It was found that, the optical
transmittance and the electrical conductivity were improved significantly
with increasing the time of annealing. At fixed temperature of 300 °C,
the transmittance increased with increasing the time of annealing and
reached its maximum values of 81% in the visible region and 94% in the
NIR region at annealing time of 120 min. The low electrical resistivity of
3.6 × 10−3 Ω cm was achieved at the same conditions. Other
parameters named free carrier concentrations, refractive index, extinction
coefficient, plasma frequency, and relaxation time were studied as a
function of annealing temperature and time for 20% Cd content.
PACS: 61.10.-i – X-ray diffraction and scattering / 78.66.-w – Optical properties of specific thin films / 73.61.-r – Electrical properties of specific thin films / 73.50.-h – Electronic transport phenomena in thin films
© EDP Sciences, 2006
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