| Issue |
Eur. Phys. J. Appl. Phys.
Volume 34, Number 1, April 2006
|
|
|---|---|---|
| Page(s) | 1 - 5 | |
| Section | Semiconductors and Related Materials | |
| DOI | https://doi.org/10.1051/epjap:2006029 | |
| Published online | 23 March 2006 | |
https://doi.org/10.1051/epjap:2006029
Growth of PbTe films by laser induced evaporation of pressed PbTe pellets
1
Material Research Unit, Department of Applied Sciences, University of Technology, PO Box 3051, Baghdad, Iraq
2
InESS, UMR 7163, CNRS/Université Louis Pasteur, BP 20, 67037, Strasbourg, France
Corresponding author: Jean-Pierre.Ponpon@iness.c-strasbourg.fr
Received:
26
September
2005
Revised:
19
December
2005
Accepted:
20
January
2005
Published online:
23
March
2006
PbTe films have been deposited on glass substrates by laser ablation from
PbTe pellets pressed from high purity Pb and Te powder. X-ray diffraction
experiments and optical characterization of the films have been performed as
a function of evaporation conditions (pellet composition and substrate
temperature). From transmittance and reflectance measurements the values of
the absorption coefficient 
, of the refractive index n, and of the
extinction coefficient k have been calculated.
PACS: 81.15.Fg – Laser deposition / 61.10.Nz – X-ray diffraction / 78.66.Li – Other semiconductors
© EDP Sciences, 2006
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