| Issue |
Eur. Phys. J. Appl. Phys.
Volume 31, Number 2, August 2005
|
|
|---|---|---|
| Page(s) | 95 - 99 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2005052 | |
| Published online | 18 August 2005 | |
https://doi.org/10.1051/epjap:2005052
Effect of annealing and In content on the properties of electron beam evaporated ZnO films
1
Physics Department, Faculty of Science, South Valley University, 82524
Sohag, Egypt
2
Physics Division, Electron Microscopy and Thin Film Dept. National
Research Center, Dokki, Cairo, Egypt
Corresponding author: abo_95@yahoo.com
Received:
28
October
2004
Revised:
2
March
2005
Accepted:
15
April
2005
Published online:
18
August
2005
The effect of both annealing and In content on the properties
of ZnO films prepared by electron beam evaporation were investigated. The
evaporation was carried out at room temperature from bulk samples prepared
by sintering technique. X-ray diffraction showed that the structure of
ZnO-In2O3 films depends on both the In content and annealing
temperature. Amorphous, highly transparent and relatively low resistive
films which can be suitable for the usage as transparent electrode of
organic light-emitting diode were obtained upon annealing at 300 
C.
Partially crystalline, highly transparent and highly resistive films which
can be used in piezoelectric applications were obtained upon annealing at 500 C. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.
PACS: 61.10.-i – X-ray diffraction and scattering / 78.20.-e – Optical properties of bulk materials and thin films / 68.55.-a – Thin film structure and morphology / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 2005
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