Eur. Phys. J. Appl. Phys.
Volume 31, Number 2, August 2005
|Page(s)||95 - 99|
|Section||Semiconductors and Devices|
|Published online||18 August 2005|
Effect of annealing and In content on the properties of electron beam evaporated ZnO films
Physics Department, Faculty of Science, South Valley University, 82524
2 Physics Division, Electron Microscopy and Thin Film Dept. National Research Center, Dokki, Cairo, Egypt
Corresponding author: firstname.lastname@example.org
Revised: 2 March 2005
Accepted: 15 April 2005
Published online: 18 August 2005
The effect of both annealing and In content on the properties of ZnO films prepared by electron beam evaporation were investigated. The evaporation was carried out at room temperature from bulk samples prepared by sintering technique. X-ray diffraction showed that the structure of ZnO-In2O3 films depends on both the In content and annealing temperature. Amorphous, highly transparent and relatively low resistive films which can be suitable for the usage as transparent electrode of organic light-emitting diode were obtained upon annealing at 300 C. Partially crystalline, highly transparent and highly resistive films which can be used in piezoelectric applications were obtained upon annealing at 500 C. For each composition the refractive index has no monotonic variation upon increasing annealing temperature.
PACS: 61.10.-i – X-ray diffraction and scattering / 78.20.-e – Optical properties of bulk materials and thin films / 68.55.-a – Thin film structure and morphology / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EDP Sciences, 2005
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