Eur. Phys. J. Appl. Phys.
Volume 72, Number 1, October 2015
|Number of page(s)||10|
|Published online||30 September 2015|
Correlation between physical properties and growth mechanism of In2S3 thin films fabricated by electrodeposition technique with different deposition times
Laboratoire de Photovoltaïques, Centre de Recherches et des Technologies de l’Energie Technopole Borjcedria,Bp 95
Hammam lif, Tunisie
2 Physics Department, Taif University, Saudi Arabia
3 Interfaces, Traitements, Organisation et Dynamique des Systèmes (ITODYS), Université Paris Diderot,Sorbonne Paris Cité, UMR CNRS 7086, 75205 Paris Cedex 13, France
a e-mail: email@example.com
Revised: 7 July 2015
Accepted: 12 August 2015
Published online: 30 September 2015
Indium sulfide (In2S3) thin films were grown on ITO-coated glass substrate using the electrodeposition method. The effect of the deposition time on the structural, morphological, optical and electrical properties of the as-grown In2S3 thin films was studied. XRD spectra of the obtained films reveal the polycrystalline nature of (β-In2S3) with a tetragonal crystal structure along the (109) plane, and exhibit a sharp transition to the (0012) plane when the deposition time is extended beyond 20 min. Using atomic force microscope (AFM), the surface morphology shows a remarkable change in the grain size, thickness, and surface roughness when varying the deposition time. UV-VIS spectrophotometer show that the optical band gap values of In2S3 decrease from about 2.82 to 1.93 eV by extending the electrodeposition duration from 5 to 20 min. All films were found to have an n-type character with a lower electrical resistivity of about 1.8×10-3 Ω cm for films deposited at 20 min.
© EDP Sciences, 2015
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