Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||271 - 273|
|Section||Defects in wide bandgap materials 2|
|Published online||15 July 2004|
Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well
Dept. of Functional Materials Science, Saitama University,
Saitama-shi, Saitama 338-8570, Japan
2 Lab. für Informationstechnologie, Universität Hannover, Schneiderberg, Hannover 30167, Germany
3 Research Center for Advanced Science and Techn., Univ. of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
In order to improve the crystal quality of GaN-based light emitting devices, photoluminescence (PL) characterization of below-gap states in plasma assisted MBE-grown GaN/AlGaN quantum well (QW) structures has been done by utilizing a below-gap excitation (BGE) light in addition to an above-gap excitation light. The decrease of the band-edge PL intensity due to the addition of the BGE of 1.17 eV indicates the presence of an energy-matched below-gap state in the two-wavelength excited PL. In continuation to our previous efficiency improvement by applying modulation-doping to GaAs/AlGaAs QW's, we focused on several undoped and Si-doped GaN/AlGaN QW's. Experimental results showed that Si modulation-doping reduces the density of below-gap states in the QW region, hence it is promising for increasing internal quantum efficiency of GaN-based QW's.
PACS: 78.55.Cr – III-V semiconductors / 78.67.De – Quantum wells / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2004
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