Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||267 - 270|
|Section||Defects in wide bandgap materials 2|
|Published online||15 July 2004|
Optical characterization of bulk GaN silicon and magnesium doped: as grown, hydrogen implanted, and annealed
Department of Physics, University of Pretoria, 0001 Pretoria,
2 Department of Chemistry, University of Pretoria, 0001 Pretoria, South Africa
3 Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61 614 Poznan, Poland
Corresponding author: email@example.com
Accepted: 28 January 2004
Published online: 15 July 2004
Two samples, GaN silicon-doped and GaN magnesium-doped, were hydrogen implanted and annealed. The low temperature photoluminescence and inelastic light scattering spectroscopy were employed to investigate structural changes as well as the changes in optical electronic transitions.
PACS: 02.20.-a – Group theory / 63.20-e – Phonons in crystal lattices / 78.55.-m – Photoluminescence, properties and materials
© EDP Sciences, 2004
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