Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||275 - 278|
|Section||Defects in wide bandgap materials 2|
|Published online||15 July 2004|
Nanopipes in GaN: photo-etching and TEM study
National Center for HREM, Kavli Institute of Nanoscience
Delft University of Technology, Rotterdamseweg 137,
2628 AL Delft, The Netherlands
2 Experimental Solid State Physics III, RIM, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
3 High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Corresponding author: S.Lazar@tnw.tudelft.nl
Accepted: 28 January 2004
Published online: 15 July 2004
Photochemical (PEC) etching and transmission electron microscopy (TEM) have been used to study the defects in hetero-epitaxial GaN layers. TEM proved that PEC etching reveals not only dislocations but also nanopipes in the form of protruding, whisker-like etch features. It is shown by diffraction contrast techniques that the nanopipes are screw coreless dislocations. An example is shown of the transformation of a normal full-core screw dislocation into a nanopipe. The PEC/TEM experiments indicate the presence of electrically active (recombinative) species in the vicinity of the nanopipes.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
© EDP Sciences, 2004
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