Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||197 - 200|
|Published online||15 July 2004|
Study of indium phosphide wafers treated by long time annealing at high temperatures
Institute of Radio Engineering and Electronics, ASCR,
Chaberska 57, 18251 Prague 8, Czech Republic
2 Institute of Physics, ASCR, Na Slovance 2, 18221 Prague 8, Czech Republic
3 Charles University, Institute of Physics, Ke Karlovu 5, 12116 Prague 2, Czech Republic
Corresponding author: firstname.lastname@example.org
Accepted: 28 January 2004
Published online: 15 July 2004
High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy.
PACS: 72.80.Ey – III-V and II-VI semiconductors / 78.30.Fs – III-V and II-VI semiconductors / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2004
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