Eur. Phys. J. AP
Volume 13, Number 2, February 2001
|Page(s)||83 - 87|
|Published online||15 February 2001|
Redistribution of Ni implanted into InP
Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700064, India
2 Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
3 Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
Corresponding author: firstname.lastname@example.org
Revised: 26 October 2000
Accepted: 7 December 2000
Published online: 15 February 2001
The redistribution of Ni in InP is studied by annealing samples of InP implanted with 0.9 MeV Ni at 60o angle of ion incidence with respect to target surface normal as a function of dose (8.5×1012−4.5×1015 cm−2). Ni profiles are measured by secondary ion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sample is characterised by remarkable Ni accumulation near the surface (at ∼ ) that has not been observed earlier along with two other distinct accumulation zones at Rnp+ and after annealing at 650 °C for 30 min. Here, Rnp is the normal component of the projected range for oblique angle bombardment.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 61.72.Yx – Interaction between different crystal defects; gettering effect / 68.35.Fx – Diffusion; interface formation
© EDP Sciences, 2001
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