| Issue |
Eur. Phys. J. AP
Volume 13, Number 2, February 2001
|
|
|---|---|---|
| Page(s) | 83 - 87 | |
| DOI | https://doi.org/10.1051/epjap:2001116 | |
| Published online | 15 February 2001 | |
https://doi.org/10.1051/epjap:2001116
Redistribution of Ni implanted into InP
1
Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700064, India
2
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
3
Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho,
Showa-ku, Nagoya 466, Japan
Corresponding author: tapashp@hp2.saha.ernet.in
Received:
31
July
2000
Revised:
26
October
2000
Accepted:
7
December
2000
Published online: 15 February 2001
The redistribution of Ni in InP is studied by annealing samples of
InP implanted with 0.9 MeV Ni at 60o angle of ion incidence
with respect to target surface normal as a function of
dose (8.5×1012−4.5×1015 cm−2). Ni profiles are measured by secondary
ion mass spectrometry (SIMS) and implantation induced damage by Rutherford
backscattering spectrometry in channeling (RBS/C) condition.
The highest dose sample
is characterised by remarkable Ni accumulation near the surface
(at ∼
)
that has not been observed earlier along with two other
distinct accumulation zones at Rnp+
and 
after annealing at 650 °C for 30 min. Here, Rnp is the normal
component of the projected range for oblique angle bombardment.
PACS: 61.72.Vv – Doping and impurity implantation in III-V and II-VI semiconductors / 61.72.Yx – Interaction between different crystal defects; gettering effect / 68.35.Fx – Diffusion; interface formation
© EDP Sciences, 2001
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