GaN epitaxial layers on inhomogeneous buffer layer: electrical and optical properties

¹ Erlangen-Nürnberg University, Department of Materials Science and Engineering, Institute of Microcharacterisation, Cauerstr. 6, D-91058 Erlangen, Germany
² INFM and University of Bologna, Department of Physics, V. le Berti Pichat 6/2, 40127 Bologna, Italy
³ Centre de Recherche sur l'Hétéro-Épitaxie et ses Applications (CRHEA-CNRS), rue Bernard Grégory, 06560 Valbonne, France
⁴ Lumilog S.A., 2720, Chemin Saint Bernard, Les Moulins I, 06220 Vallauris, France

Corresponding author: cristina.grazzi@ww.uni-erlangen.de

Received: 5 September 2003
Accepted: 28 January 2004
Published online: 15 July 2004

Abstract

This paper reports on first results obtained on GaN epitaxial layer grown on a single wafer with a lateral variation in defect density. The chemically homogeneous GaN epitaxial layer was deposited by metalorganic chemical vapour deposition onto a specially prepared buffer layer. A chemical gradient in the nitrogen contents of the precursor flux was induced during the growth of the GaN buffer layer. This condition leads a corresponding gradient of the dislocation density within the epilayer. The electrical and optical properties of the GaN epilayer have been analysed by means of electron beam induced current, photoluminescence and photocurrent techniques. All our measurements reveal lateral gradients in the epilayer properties as concern (i) the density of recombining centres in the GaN film and (ii) their recombination activity, both radiative and nonradiative. This paper shows that a proper combination of beam based techniques can contribute to the detailed analysis of the well know yellow luminescence band which in the GaN epilayer here investigated consist of four well distinct peaks.