| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 167 - 169 | |
| Section | Electrical properties | |
| DOI | https://doi.org/10.1051/epjap:2004096 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004096
Annealing ambient controlled deep defect formation in InP
1
Materials Science Centre, Institute of Semiconductors, Chinese
Academy of Science, PO Box 912, Beijing 100083, P.R. China
2
Hebei Semiconductor Research Institute, PO Box 179,
Shijiazhuang 050051, Hebei, P.R. China
Corresponding author: zhaoyw@red.semi.ac.cn
Received:
2
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while InP annealed in iron phosphide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.
PACS: 61.72.Ji – Point defects (vacancies, interstitials, color centers, etc.) and defect clusters / 81.05.Ea – III-V semiconductors / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2004
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