Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||251 - 254|
|Section||Defects in wide bandgap materials 2|
|Published online||15 July 2004|
Phonon assignments in GaN bulk
Department of Physics, University of Pretoria, 0001 Pretoria, South Africa
Corresponding author: email@example.com
Accepted: 15 December 2003
Published online: 15 July 2004
The measured phonon-density of states of bulk GaN by time-of-flight neutron spectroscopy has been recently reported by Nipko et al. [CITE]. The authors have also calculated the true partial and total DOS as well as the phonon dispersion curves along major symmetry directions in the Brillouin zone. However, the group-theoretical phonon assignments have not been provided. Based on calculated symmetry allowed modes spanned by displacement representation and on the derived connectivity relations along the major directions in the Brillouin zone we have assigned Nipko's phonon dispersion curves to irreducible representations (species) of the (P63mc) space group of GaN.
PACS: 02.20.-a – Group theory / 63.20.Dj – Phonon states and bands, normal modes, and phonon dispersion / 78.30.Am – Elemental semiconductors and insulators
© EDP Sciences, 2004
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