Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||93 - 95|
|Section||Nanostructures and near-field probe techniques 2|
|Published online||15 July 2004|
Lateral conductivity in GaAs/InAs quantum dot structures
Research Institute for Technical Physics and
Materials Science, Konkoly-Thege 29-33, H-1121 Budapest, Hungary
2 Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 53 Praha 6, Czech Republic
3 MASPEC Institute - C.N.R., Parco Area delle Scienze 37a, 43010 Fontanini-Parma, Italy
Corresponding author: email@example.com
Accepted: 9 December 2003
Published online: 15 July 2004
Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dependence, fast defect transient (FDT), and electron beam induced conductivity (EBIC) measurements were applied. The conductivity in the QD plane decays within a distance of 10 microns. The capacitance transients are dominated by the local QD-plane transversal conductivity and by the free carrier transport in the cap layer. The nonequilibrium free carrier created by electron beam excitation develop a potential barrier at macroscopic distances from the electrical contacts.
PACS: 73.63.Kv – Quantum dots / 73.63.Hs – Quantum wells / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2004
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