| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 235 - 238 | |
| Section | Defects in wide bandgap materials 1 | |
| DOI | https://doi.org/10.1051/epjap:2004105 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004105
Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy
1
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine
Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
2
Laboratoire Multimatériaux et Interfaces, UCB Lyon 1, Bât. Berthollet
(731), 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
Corresponding author: bluet@insa.insa-lyon.fr
Received:
9
July
2003
Accepted:
9
December
2003
Published online: 15 July 2004
UV scanning photoluminescence spectroscopy is applied to 4H-SiC epitaxy characterization. In a first part, the technique is used for triangular defects characterization. The results show that two kinds of defects are present. Some defects are inclusion of cubic SiC which is confirmed by Raman spectroscopy. The other ones consist of staking faults of different thicknesses acting as quantum wells. In a second part, the effective lifetime profile is mapped for a whole 50 mm epitaxy using the variation of room temperature PL intensity versus excitation intensity.
PACS: 78.55.-m – Photoluminescence, properties and materials / 78.66.Db – Elemental semiconductors and insulators
© EDP Sciences, 2004
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.