Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||235 - 238|
|Section||Defects in wide bandgap materials 1|
|Published online||15 July 2004|
Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine
Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
2 Laboratoire Multimatériaux et Interfaces, UCB Lyon 1, Bât. Berthollet (731), 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
Corresponding author: firstname.lastname@example.org
Accepted: 9 December 2003
Published online: 15 July 2004
UV scanning photoluminescence spectroscopy is applied to 4H-SiC epitaxy characterization. In a first part, the technique is used for triangular defects characterization. The results show that two kinds of defects are present. Some defects are inclusion of cubic SiC which is confirmed by Raman spectroscopy. The other ones consist of staking faults of different thicknesses acting as quantum wells. In a second part, the effective lifetime profile is mapped for a whole 50 mm epitaxy using the variation of room temperature PL intensity versus excitation intensity.
PACS: 78.55.-m – Photoluminescence, properties and materials / 78.66.Db – Elemental semiconductors and insulators
© EDP Sciences, 2004
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