| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 239 - 242 | |
| Section | Defects in wide bandgap materials 1 | |
| DOI | https://doi.org/10.1051/epjap:2004112 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004112
Structural and electrical characterization of n+-type ion-implanted 6H-SiC
1
CNR-IMM Sezione di Catania, Stradale Primosole 50-95121
Catania, Italy
2
Dipartimento di Fisica ed Astronomia, Via S. Sofia 64-95123 Catania,
Italy
Corresponding author: Vito.raineri@imm.cnr.it
Received:
26
June
2003
Accepted:
9
December
2003
Published online: 15 July 2004
The influence of different annealing procedures on both structural and electrical characteristics is investigated for 6H-SiC implanted with nitrogen in the doping concentration range of 1 × 1018 − 1 × 1020 cm−3 by Transmission Electron Microscopy and Scanning Capacitance Microscopy. The poor electrical activation of N+ ions is correlated to the formation of a high density of precipitates in the implanted layer when increasing the doping concentration. A rapid thermal pre-annealing combined with conventional furnace annealing is effective to improve the active fraction but the presence of the precipitates overwhelms this effect for high doping concentration (> 1 × 1019 cm−3).
PACS: 06.60.Ei – Sample preparation (including design of sample holders) / 68.37.Ps – Atomic force microscopy (AFM) / 85.30.De – Semiconductor-device characterization, design and modeling
© EDP Sciences, 2004
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