Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||231 - 233|
|Section||Defects in wide bandgap materials 1|
|Published online||15 July 2004|
Structural characterisation of 4H-SiC substrates by cathodoluminescence and X-ray topography
Laboratoire TECSEN, UMR 6122, Université de Marseille
St Jérome case 231, 13397 Marseille, Cedex 20, France
2 Dpto. Fisica de Materiales, Fac. Ciencias Fisicas - UCM. Ciudad Universitaria, 28040 Madrid, Spain
Corresponding author: firstname.lastname@example.org
Accepted: 9 December 2003
Published online: 15 July 2004
Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of SiC. The -oriented 4H-SiC bulk wafers are particularly investigated, due to some advantages with respect to the (0001)-Si face. One of these advantages is a better crystal reordering during post-implantation annealing. In this paper cathodoluminescence (CL) and X-Ray topography measurements have been carried out in order to investigate the optical and structural properties of commercial 4H n+-type substrates.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.72.-y – Defects and impurities in crystals; microstructure / 78.60.Hk – Cathodoluminescence, ionoluminescence
© EDP Sciences, 2004
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