| Issue |
Eur. Phys. J. AP
Volume 20, Number 2, November 2002
Instrumentation Interdisciplinary Colloque (C2I 2001)
|
|
|---|---|---|
| Page(s) | 141 - 144 | |
| Section | Instrumentation and Metrology | |
| DOI | https://doi.org/10.1051/epjap:2002084 | |
| Published online | 25 October 2002 | |
https://doi.org/10.1051/epjap:2002084
Development of an UV scanning photoluminescence apparatus for SiC characterization*
Laboratoire de Physique de la Matière (UMR 5511 CNRS), Institut National
des Sciences Appliquées de Lyon, 7 avenue Jean Capelle, 69621 Villeurbannne Cedex,
France
Corresponding author: bluet@insa.insa-lyon.fr
Received:
21
November
2001
Revised:
18
June
2002
Accepted:
20
June
2002
Published online:
25
October
2002
We have adapted a scanning photoluminescence (SPL) apparatus, previously developed for III-V compounds analysis, for the characterization of SiC. The PL mapping is obtained by scanning the sample, fixed to an x-y stage with 1 μm minimal step, under a doubled Ar+ laser beam (244 nm) focused by a microscope objective (×52). For this excitation the spot diameter is about 4 μm. The PL signal can be either directly detected, giving integrated PL intensity, either dispersed using a monochromator, giving spectrally resolved PL (1 nm resolution). The measurements can be realized at room temperature for near band edge studies, or at low temperature (80 K) for deep defects investigation. The gettering effect of non radiative centres by the screw dislocations in 6H-SiC is evidenced using this apparatus.
PACS: 78.55.Ap – Elemental semiconductors
© EDP Sciences, 2002
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