Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||255 - 258|
|Section||Defects in wide bandgap materials 2|
|Published online||15 July 2004|
TEM observation of nanopipes in heteroepitaxial GaN
Warsaw University of Technology, Faculty of Materials Science & Engineering,
Woloska 141, 02-507 Warsaw, Poland
2 University of Nijmegen, RIM, Exp. Solid State Physics III, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
3 High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
Corresponding author: firstname.lastname@example.org
Accepted: 18 December 2003
Published online: 15 July 2004
Heteroepitaxial GaN layers grown on sapphire by metal organic vapour phase epitaxy (MOVPE) have been characterised by conventional transmission electron microscopy (TEM) on planar and cross-sectional samples, Large Angle Convergent Beam Electron Diffraction (LACBED) and by high-resolution transmission electron microscopy (HRTEM). Hollow tubes termed nanopipes were resolved on planar view and cross-sections of heteroepitaxial GaN. For advanced studies of the nature of nanopipes the LACBED method was employed. The recognition between perfect structure and screw distortion around nanopipes was performed with high accuracy using Zone Axis LACBED images.
PACS: 61.72.Ff – Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) / 61.14.Lj – Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction / 61.72.Qq – Microscopic defects (voids, inclusions, etc.)
© EDP Sciences, 2004
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