Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||159 - 161|
|Section||Defects in silicon|
|Published online||15 July 2004|
Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2 IHP/BTU Joint Lab, Universitätsplatz 3-4, 03044 Cottbus, Germany
3 BTU, Universitätsplatz 3-4, 03044 Cottbus, Germany
4 Wacker Siltronic AG (Present name: Siltronic AG) , PO Box 1140, 84479 Burghausen, Germany
5 Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany
Corresponding author: firstname.lastname@example.org
Accepted: 10 February 2004
Published online: 15 July 2004
Spatial distribution and properties of oxide were examined in 300 mm nitrogen (N) doped CZ-Si. Experimentally grown materials with N ranging from ~ 1013 cm−3 to 1015 cm−3 were studied by infrared light scattering tomography, scanning infrared microscopy, transmission electron microscopy and electron beam induced current. It was established that an increasing N content improves the uniformity of the radial distribution of precipitates in the bulk of the wafer, the density of precipitates reaching a level of ~ 109 cm−3. The width of the denuded zone varies in the range from m to m depending on radial position and N doping level. Electron microscopy revealed lower oxide precipitate densities of about 105 to 108 cm−3. The results are interpreted in terms of existence of agglomerates of nanometer size precipitate nuclei and/or by the defect-induced strain relaxation around the precipitates.
PACS: 61.72.Yx – Interaction between different crystal defects; gettering effect / 61.72.Qq – Microscopic defects (voids, inclusions, etc.) / 78.35.+c – Brillouin and Rayleigh scattering; other light scattering
© EDP Sciences, 2004
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