| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 163 - 166 | |
| Section | Defects in silicon | |
| DOI | https://doi.org/10.1051/epjap:2004136 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004136
Calculation of boron segregation at the Si(100)/SiO2 interface
Department of Electronics and Information Systems, Osaka
University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
Corresponding author: furuhashi@eie.eng.osaka-u.ac.jp
Received:
10
July
2003
Accepted:
13
February
2004
Published online: 15 July 2004
The stability of B atom near the Si(100)/SiO2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO2 interface. Contrary to the experimental observations showing that B atoms segregate into SiO2, B atoms are found to be stable in Si free of defects. But authors can rephrase differently this sentence. On the other hand, when an O vacancy exists in SiO2, the B atom is trapped by the O vacancy and becomes quite stable in SiO2.
PACS: 68.35.Dv – Composition, segregation; defects and impurities / 31.15.Ar – Ab initio calculations
© EDP Sciences, 2004
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