Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||155 - 158|
|Section||Defects in silicon|
|Published online||15 July 2004|
Defect-induced birefringence in crystalline silicon ingots
Department of Electronics and Information Science, Kyoto Institute of
Technology, Matsugasaki, Sakyo-ku Kyoto 606-8585, Japan
Corresponding author: firstname.lastname@example.org
Accepted: 29 January 2004
Published online: 15 July 2004
Birefringence induced by crystal defects has been successfully characterized as standard ingot form in Si crystals by using a scanning infrared polariscope. It is found that there is a certain amount of defect-induced birefringence besides the birefringence due to the optical anisotropy in CZ Si crystals. If the infrared probing light is introduced to the crystallographic directions, then the defect-induced birefringence is clearly observed with no influence of the optical anisotropy in cubic crystals. Although it is difficult to evaluate the absolute value of crystal defects, it is demonstrated that the SIRP measurement is very useful to nondestructively characterize the quality of Si crystals as standard ingot form without any special treatment.
PACS: 07.60.Fs – Polarimeters and ellipsometers / 61.72.Hh – Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 78.20.Fm – Birefringence
© EDP Sciences, 2004
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