| Issue |
Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004
Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|
|
|---|---|---|
| Page(s) | 155 - 158 | |
| Section | Defects in silicon | |
| DOI | https://doi.org/10.1051/epjap:2004049 | |
| Published online | 15 July 2004 | |
https://doi.org/10.1051/epjap:2004049
Defect-induced birefringence in crystalline silicon ingots
Department of Electronics and Information Science, Kyoto Institute of
Technology, Matsugasaki, Sakyo-ku Kyoto 606-8585, Japan
Corresponding author: yamada@dj.kit.ac.jp
Received:
22
July
2003
Accepted:
29
January
2004
Published online: 15 July 2004
Birefringence induced by crystal defects has been successfully
characterized as standard ingot form in Si crystals by using a
scanning infrared polariscope. It is found that there is a
certain amount of defect-induced birefringence besides the
birefringence due to the optical anisotropy in CZ Si crystals.
If the infrared probing light is introduced to the
crystallographic 
directions, then the
defect-induced birefringence is clearly observed with no
influence of the optical anisotropy in cubic crystals. Although
it is difficult to evaluate the absolute value of crystal defects,
it is demonstrated that the SIRP measurement is very useful to
nondestructively characterize the quality of Si crystals as
standard ingot form without any special treatment.
PACS: 07.60.Fs – Polarimeters and ellipsometers / 61.72.Hh – Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.) / 78.20.Fm – Birefringence
© EDP Sciences, 2004
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