Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||107 - 109|
|Section||Nanostructures and near-field probe techniques 2|
|Published online||15 July 2004|
Cathodoluminescence study of widegap-semiconductor nanowires
Nanomaterials Laboratory, National Institute for Materials
Science Sengen 1-2-1, Tsukuba 305-0047, Japan
2 Advanced Materials Laboratory, National Institute for Materials Science Namiki 1-1, Tsukuba 305-0044, Japan
3 Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
Corresponding author: SEKIGUCHI.Takashi@nims.go.jp
Accepted: 9 February 2004
Published online: 15 July 2004
Two kinds of widegap-semiconductor nanowires, Tb-doped AlN nanowire arrays on Si and free-standing BN nanowires, were fabricated by different catalyst-free methods. Well-aligned Tb-doped AlN nanowire arrays were grown on the Si (111) substrate by magnetron sputtering method. Free-standing BN nanowires were grown by heat-treatment of B-N-O precursor and graphite powders. The crystal structure of nanowires was characterized by using X-ray diffraction and transmission electron microscopy. Cathodoluminescence (CL) observation was performed with a field emission scanning electron microscope operating with an electron beam lower than 5 kV. CL spectra mapping as well as monochromatic CL imaging clearly revealed not only the variation of the luminescence spectra of different nanowires but also that along the single wire. Our results demonstrates the advantage of CL for the characterization of nanowires.
PACS: 78.67.Bf – Nanocrystals and nanoparticles / 78.60.Hk – Cathodoluminescence, ionoluminescence
© EDP Sciences, 2004
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