Eur. Phys. J. Appl. Phys.
Volume 34, Number 1, April 2006
|Page(s)||31 - 34|
|Section||Characterization of Materials: Imaging, Microscopy and Spectroscopy|
|Published online||23 March 2006|
Luminescence from thulium and samarium doped amorphous AlN thin films deposited by RF magnetron sputtering and the effect of thermal activation on luminescence
Department of Science and Mathematics, Mount Olive College, 634 Henderson
Street, Mount Olive, NC 28365, USA
Corresponding author: email@example.com
Revised: 9 November 2005
Accepted: 9 November 2005
Published online: 23 March 2006
Thin films of thulium and samarium doped AlN are deposited on silicon (111) substrates at 77 K by rf magnetron sputtering method. 200–400 nm thick films are grown at 100–200 watts RF power and 5–8 mtorr nitrogen, using a metal target of Al with Tm and Sm separately. X-rays diffraction results show that films are amorphous. Cathodoluminescence studies are performed at room temperature and two dominant peaks are observed in Tm at 467 nm from transition and 480 nm from 1G4 to the ground state 3H6 transition. Other peaks in the visible region are obtained at 650 nm and 685 nm due to and transitions. Peaks in the ultraviolet and infrared region are also obtained at 371 nm, and 802 nm as a result from and transition respectively. Sm gives four peaks at 564 nm, 600 nm, 648 nm and 707 nm as a result of , , and transitions. Films are thermally activated at 1200 K for half an hour in a nitrogen atmosphere. Thermal activation enhances the intensity of luminescence.
PACS: 78.60.Hk – Cathodoluminescence, ionoluminescence / 78.66.Fd – III-V semiconductors
© EDP Sciences, 2006
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