Eur. Phys. J. Appl. Phys.
Volume 27, Number 1-3, July-September 2004Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X)
|Page(s)||149 - 153|
|Section||Defects in silicon|
|Published online||15 July 2004|
Evolution of defect structure of Ge-implanted Si crystal during nanosecond laser annealing
Institute of Physics, Polish Academy of Sciences,
al. Lotników 32/46, PL-02 668 Warsaw, Poland
2 Soltan Institute for Nuclear Studies, ul. Hoża 69, PL-00 681 Warsaw, Poland
Corresponding author: email@example.com
Accepted: 28 January 2004
Published online: 15 July 2004
The influence of the laser annealing on the defect structure of the near-surface layer of silicon crystal implanted with 40 keV Ge ions is reported. Evolution of defect structure during nanosecond pulse laser annealing is characterised by means of several complementary methods: reflection high-energy electron diffraction, interference-polarizing microscopy, Rutherford back-scattering and secondary ion mass spectrometry. Regions irradiated with different energy densities of the laser beam are compared. The role of the dopant in the layer recrystallised from the melt is discussed.
PACS: 61.72.Cc – Kinetics of defect formation and annealing / 81.40.Ef – Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization / 61.80.Ba – Ultraviolet, visible, and infrared radiation effects (including laser radiation)
© EDP Sciences, 2004
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