Eur. Phys. J. Appl. Phys.
Volume 25, Number 1, January 2004
|Page(s)||11 - 23|
|Section||Organic Materials and Devices|
|Published online||13 October 2003|
Analysis and modeling of the self-heating effect in SiGe HBTs
Laboratoire de Microélectronique IXL, UMR 5818, University of Bordeaux I, 33405 Talence, France
2 LEPT – ENSAM, Esplanade des Arts et Métiers, 33405 Talence, France
Corresponding author: firstname.lastname@example.org
Revised: 23 July 2003
Accepted: 31 July 2003
Published online: 13 October 2003
This paper investigates the self-heating effect in SiGe heterojunction bipolar transistors. A physical study leads to a nonlinear physical model describing static and dynamic self-heating mechanism. The implementation of this model using an electrical equivalent circuit is presented. Our approach is validated using measurements on devices from different technologies. System configuration, measurement, and calibration issues are presented.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 85.30.Pq – Bipolar transistors
© EDP Sciences, 2004
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