Eur. Phys. J. AP
Volume 7, Number 3, September 1999
|Page(s)||241 - 246|
|Published online||15 September 1999|
RF characterisation and modelling of AlGaAs/GaAs HBT for 1.8 GHz applications
Laboratoire d'Analyse et d'Architecture des Systèmes du CNRS, 7 avenue du Colonel
Roche, 31077 Toulouse
Cedex 4, France
Corresponding author: firstname.lastname@example.org
Revised: 8 June 1999
Accepted: 8 June 1999
Published online: 15 September 1999
For power applications, AlGaAs/GaAs heterojunction bipolar transistors (HBT's) were found to present high efficiency and linearity at high density RF power. We report power performances in S-band of a 6 × 60 µm2 one emitter finger HBT fabricated in our laboratory. At 1.8 GHz, when tuned for maximum efficiency, each transistor delivered a CW output power of 0.5 W (150 kW/cm2) and a power-added efficiency of 62% and 80% in class AB and C operation respectively. The physical model based on technological and measured parameters incorporates temperature dependence for most of its parameters. It has been easily used to analyse DC and RF power characteristics in class AB mode and to determine input and output optimum matching cells. Good agreement between simulated and experimental results support the validity of the model.
PACS: 85.30.-z – Semiconductor devices
© EDP Sciences, 1999
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