| Issue |
Eur. Phys. J. AP
Volume 23, Number 1, July 2003
|
|
|---|---|---|
| Page(s) | 39 - 40 | |
| Section | Semiconductors and Devices | |
| DOI | https://doi.org/10.1051/epjap:2002120 | |
| Published online | 11 December 2002 | |
https://doi.org/10.1051/epjap:2002120
In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation
1
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse,
UMR CNRS-Université Paris XI, Orsay, France
2
Department of Electronic Materials Engineering, Research School of Physical Sciences and
Engineering, Australian National University, Canberra, Australia
Corresponding author: ruault@csnsm.in2p3.fr
Received:
23
May
2002
Accepted:
18
October
2002
Published online:
11
December
2002
We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.
PACS: 61.80.Jh – Ion radiation effects / 61.72.Qq – Microscopic defects (voids, inclusions, etc.)
© EDP Sciences, 2003
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