Eur. Phys. J. AP
Volume 23, Number 1, July 2003
|Page(s)||39 - 40|
|Section||Semiconductors and Devices|
|Published online||11 December 2002|
In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiation
Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse,
UMR CNRS-Université Paris XI, Orsay, France
2 Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
Corresponding author: firstname.lastname@example.org
Accepted: 18 October 2002
Published online: 11 December 2002
We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.
PACS: 61.80.Jh – Ion radiation effects / 61.72.Qq – Microscopic defects (voids, inclusions, etc.)
© EDP Sciences, 2003
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